df005s1 - DF10S1 ? bridge rectifier ? 2014 fairchild semiconductor corporation www.fairchildsemi.com df005s1 - DF10S1 rev. 1.0.1 october 2014 df005s1 - DF10S1 bridge rectifier features ? maximum surge rating: i fsm = 35 a i 2 t = 5.1 a 2 sec ? optimized v f : typical 0.95 v at 1 a, 25c ? df10s socket compatible ? glass passivated junctions ?space saving ? lead free in comply with eu rohs 2002/95/eu directives ? green molding compound: iec61249 halogen free ? qualified with ir reflow and wave soldering ordering information part number top mark package packing method df005s1 df005s1 sdip 4l tape and reel df01s1 df01s1 sdip 4l tape and reel df02s1 df02s1 sdip 4l tape and reel df04s1 df04s1 sdip 4l tape and reel df06s1 df06s1 sdip 4l tape and reel df08s1 df08s1 sdip 4l tape and reel DF10S1 DF10S1 sdip 4l tape and reel description with the ever-pressing need to improve power supply efficiency, improve surge rating, improve reliability, and reduce size, the dfxs1 family sets a new standard in performance and cost saving. the dfxs1 family balances performance against cost. the design offers a moderate surge rating of 35 a required to handle inrush surge and maintain good reli- ability, with fair price. the dfxs1 achieves good performance in a sdip sur- face mount form factor, reducing board space and volu- metric requirements vs. competitive devices. + - _ _ in out sdip
df005s1 - DF10S1 ? bridge rectifier ? 2014 fairchild semiconductor corporation www.fairchildsemi.com df005s1 - DF10S1 rev. 1.0.1 2 absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. thermal characteristics (1) note: 1. the thermal resistances (r ja & jl ) are characterized with the device mounted on the following fr4 printed circuit boards, as shown in figure 1 and figure 2 pcb size: 76.2 x 114.3 mm. heating effect from adjacent dice is considered and only two dices are powered at the same time. symbol parameter value unit df005s1df01s1df02s1df04s1df06s1df08s1DF10S1 v rrm maximum recurrent peak reverse voltage 50 100 200 400 600 800 1000 v v rms maximum rms bridge input voltage 35 70 140 280 420 560 700 v v dc maximum dc blocking voltage 50 100 200 400 600 800 1000 v i f(av) maximum average forward current t a = 40 c 1.0 a i fsm peak forward surge current 8.3 ms single half-sine wave superimposed on rated load(jedec method) 35 a t stg storage temperature range -55 to +150 c t j operating junction tempera- ture range -55 to +150 c symbol parameter conditions max. unit r ja thermal resistance, junction to ambient single-die measurement (maximum land pattern: 13 x 13 mm) 65 c/w multi-die measurement (maximum land pattern: 13 x 13 mm) 50 multi-die measurement (minimum land pattern: 1.3 x 1.5 mm) 105 jl thermal characterization parameter, junction to lead single-die measurement (maximum and minimum land pattern) 27 c/w figure 1. maximum pads of 2 oz copper figure 2. minimum pads of 2 oz copper f f s s f f s s
df005s1 - DF10S1 ? bridge rectifier ? 2014 fairchild semiconductor corporation www.fairchildsemi.com df005s1 - DF10S1 rev. 1.0.1 3 electrical characteristics values are at t a = 25c unless otherwise noted. symbol parameter conditions min. typ. max. unit v f forward voltage drop per bridge element i f = 1.0 a 1.1 v i r dc reverse current at rated dc blocking voltage t j = 25 c3 a t j = 125 c500 i 2 t rating for fusing (t < 8.3 ms) 5.1 a 2 s c j junction capacitance v r = 4.0 v, f = 1.0 mhz 10 pf
df005s1 - DF10S1 ? bridge rectifier ? 2014 fairchild semiconductor corporation www.fairchildsemi.com df005s1 - DF10S1 rev. 1.0.1 4 typical performance characteristics figure 3. typical instantaneous forward characteristics figure 4. typical reverse characteristics figure 5. maximum average current vs. ambient temperature figure 6. peak forward surge current vs. number of cycles at 60hz figure 7. typical junction capacitance 0.01 0.1 1 10 0.30.40.50.60.70.80.91.01.11.21.3 t j = -55 o c t j =125 o c t j =150 o c t j =25 o c forward voltage drop, v f [v] forward current, i f [a] 0 50 100 150 200 250 300 350 400 1e-4 1e-3 0.01 0.1 1 10 100 t j =-55 o c t j =150 o c t j =25 o c reverse current, i r [ a] reverse voltage, v r [v] t j =125 o c 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 max pad (sigle die) average current [dc] ambient temperature [ o c] 0 20406080100 0 10 20 30 40 i fsm , peak forward surge current [a] number of cycles at 60 hz 0 1020304050 0 2 4 6 8 10 12 14 16 f = 1 mhz juntion capacitance, c j [pf] reverse voltage, v r [v]
df005s1 - DF10S1 ? bridge rectifier ? 2014 fairchild semiconductor corporation www.fairchildsemi.com df005s1 - DF10S1 rev. 1.0.1 5 physical dimensions figure 8. 4-lead, sdip, 6.5 mm wide 1.30 1.50 5.10 10.40 1.12 2.60 2.20 8.510 8.050 chamfer optional 5.200 5.000 1.200 0.890 6.500 6.200 10.300 9.400 12 3 4 pin1 id optional 1.530 1.020 1.000 0.028 0.330 0.220 7.874 7.370 notes: a. this package does not conform to any reference standard. b. all dimensions are in millimeters. c. dimensions are exclusive of burrs, mold flash and tie bar protrusions. g. drawing file name: mkt-sdip04arev4. top view side view end view land pattern recommendation
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